Abstract
Abstract Carbon Nano-Tube Field Effect Transistors (CNTFETs) are being widely studied as possible successors to silicon MOSFETs. Using current mode has many advantages such as performing sum operation by means of a simple wired connection. Also, direction of the current can be used to exhibit the sign of digits. It is expected that the advantages of current mode approaches will become even more important with increased speed requirements and decreased supply voltage. In this paper, we present five new circuit designs for differential absolute value in current mode logic which have been simulated by CNTFET model. The considered base current for this model is 2 µA and supply voltage is 0.9 V. In all of our designs we used N-type CNTFET current mirrors which operate as truncated difference circuits. The operation of Differential Absolute Value circuit calculates the difference between two input currents and our circuit designs are operate in 8 logic levels.
Highlights
Carbon Nano-Tube Field Effect Transistors (CNTFETs) are being widely studied as possible successors to silicon MOSFETs
Recent experiences demonstrate that due to design simplicity and larger dynamic range, current mode approach is becoming attractive for the performing Multiple-Valued Logic (MVL) function especially when the radix is larger than 3 and it can be applied for higher radix MVL circuit design successfully [2,3,6]
In this model we considered Schottky Barrier Effects, Parasitics, including Carbon Nano-tube (CNT), Source/Drain, and Gate resistances and capacitances, and CNT Charge Screening Effects
Summary
We present five new circuit designs for differential absolute value in current mode logic which have been simulated by CNTFET model. The on-current and consequent device performance of SB-CNTFET is determined by the contact resistance due to the existence of tunneling barriers at both or one of the source and drain contacts, instead of the channel conductance. The ambipolar behavior of SB-CNTFET makes it undesirable for complementary logic design Taking into account both the fabrication achievability and higher device performance of MOSFET-like CNTFET as compared to SB-CNTFET. The CNTFET that used in HSPICE model is MOSFET-like CNTFET
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