Abstract
The first-principles ultra-soft pseudopotential plane wave based on density functional theory is used to calculate the electronic structure and photoelectric properties of zinc blende GaN and zinc blende InxGa1-xN with different In doping concentrations (x=0, 0.125, 0.25, 0.375, 0.5). It is shown that zinc blende GaN and its In-doped system are all direct bandgap semiconductor materials. With the increase of In doping concentration, the lattice constant of InxGa1-xN increases and the band gap decreases, the absorption spectrum shift to the red region. Therefore, it can be inferred that by adjusting the doping concentration of In, the light absorption range of InxGa1-xN can cover the entire solar spectrum, which means that InxGa1-xN can be worthy to fabricate photovoltaic devices such as full-spectrum solar cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
