Abstract
The paper proposes a methodology study to analyze the body diode robustness of SiC MOSFETs. Devices from different manufacturers are used to validate the analysis. Two types of stresses have been applied: a continuous conduction test (BDCT) or a pulsed conduction test, the classical half-sine surge current test applied to body diodes, BDSCT. BDCT applied current must be limited to avoid damages related to the packaging but BDSCT allows analyzing both assembly degradation and bipolar degradation.
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