Abstract
Hydrogen (H) behavior in ZnO based diluted magnetic semiconductors (DMSs) was investigated theoretically. It was found that H exhibits diverse electronic and structural behavior across a range of different DMSs, depending on the doped transition metal element. For instance in the extensively debated Co doped ZnO system (ZnO:Co), H dopants do not introduce significant carrier concentrations at room temperature thus carrier mediated magnetism is not attainable by H codoping. In this case, magnetism can be manipulated by other mechanisms. In contrast, in the ZnO:V system, H is positively charged for the entire bandgap region, meaning carrier mediated magnetism may be possible.
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