Abstract
The electronic structures of nitrogen ( N )-doped TiO 2 anatase (101) surfaces have been investigated by density functional theory (DFT) plane-wave pseudopotential method with general gradient approximation (GGA) + U (Hubbard coefficient) method being adopted to describe the exchange-correlation effects. Both substitutional and interstitial N doping have been considered in this paper as well as the case of surface N adsorption. The results demonstrated that there is no obvious band gap narrowing observed by introducing N impurities except several N 2p states lying in the gap, whereas the introduction of oxygen vacancy was confirmed playing an important role on band gap narrowing. The results accord well with some experimental results.
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