Abstract

A theoretical study of structural, electronic and optical properties of Ag2S is presented using the full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT). In this approach, the modified Becke Johnson (MBJ) potential coupled with Local Density Approximation (LDA) was used for the exchange-correlation potential calculation. Ground state properties are determined for the bulk material in monoclinic phase. Band structure reveals that this compound is a direct energy band gap semiconductor. MBJLDA results for the band gap of this compound are much better than those obtained using LDA, Perdew–Burke–Ernzerhof generalized gradient approximation (PBE-GGA) and Engel–Vosko's GGA (EV-GGA). A very good agreement is observed between MBJLDA band gap and corresponding experimental values as compared to other calculations. Optical constants including the dielectric function, refractive index, extinction coefficient, electron energy loss function, reflectivity and absorption coefficient are obtained and discussed.

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