Abstract

The high mobility and velocity of the carriers make germanene and silicene promising materials for future electronic devices like field-effect transistors. The lack of bandgap in these materials has been a prominent hurdle in the development of electronic devices based on them. This work presents a novel method of bandgap creation in zigzag germanene nanoribbons (ZGeNRs) by using fluorine (F) atoms as the functionalizing agent. A combination of density functional theory and non-equilibrium Green's function is employed for all the calculations. Variation of bandgap and effective mass of carriers with the width of the nanoribbons is also presented. Furthermore, a study of the transmission spectrum and transmission Eigen channels substantiates the semiconducting nature of F functionalized ZGeNRs. To assess the stability of F functionalized ZGeNRs, the formation energy of the nanoribbons is evaluated. The formation energy is found to be −1.60 eV/Å. Since the formation energy of F functionalized ZGeNRs is more negative than that of its pristine counterpart, the F functionalized ZGeNR is more stable than its pristine counterpart. Such results are suggestive of the potential of F functionalized ZGeNRs for future nano-scale devices.

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