Abstract
AbstractThis work investigates the extrinsic molecular doping of zinc oxide (ZnO) thin films grown by plasma enhanced molecular beam epitaxy (P‐MBE). The dopant was thermally evaporated arsenic trioxide (formula: As2O3 in the solid state), which appears as As4O6 molecule in the gaseous phase. Cracking experiments of these As4O6 molecules were made using a radio frequency oxygen plasma. Structural, chemical and optical investigations were made with (High Resolution) X‐ray diffraction (HRXRD), secondary ion mass spectroscopy (SIMS) and photoluminescence (PL). These results show high incorporation rates (about 2x1018 cm‐3) and optical activity of the dopant. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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