Abstract
We report the observation of a two-dimensional (2D) hole gas in Ga0.47In0.53As/InP heterojunction grown by metalorganic chemical-vapor deposition. In a sample with a total hole density ptot =7.6×1011 cm−2 a Hall mobility μH =10 500 cm2/V s was reached at 4.2 K. Angle-dependent Shubnikov–de Haas measurements as well as quantized Hall effect observations confirmed the two-dimensionality of the system. In contrast to the case of the 2D hole gas in GaAs/AlGaAs, low-temperature persistent photoconductivity was observed, significantly increasing the hole density at the interface.
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