First double-sided 3-D detectors fabricated at CNM-IMB

Abstract

The first results on double-sided three-dimensional (3-D) silicon radiation detectors are reported in this paper. The detector consists of a three-dimensional array of electrodes that penetrate into the detector bulk with the anode and cathode electrodes etched from opposite sides of the substrate. The geometry of the detector is such that a central anode is surrounded by four cathode contacts. The maximum drift and depletion distances are equal to the electrode spacing rather than detector thickness. This structure is similar to a conventional 3-D detector, but has a simpler fabrication process. The technological and the electrical simulations together with the fabrication steps of this new detector configuration are reported in this paper. The first detectors fabricated at CNM are reported here and have been characterized by electrical measurements.