Double Sided 3D Detector Technologies at CNM-IMB

Abstract

A new architecture for 3D silicon radiation detectors is proposed which simplifies the fabrication process and avoids the limitations of 3D detectors technology. The detector consists in a three-dimensional array of electrodes that penetrate into the detector bulk. The geometry of the detector is such that a central anode is surrounded by four cathode contacts. This geometry gives a uniform electric field with the maximum drift and depletion distance set by the electrode spacing rather than detector thickness. This structure is similar to a conventional 3D detector, but has a simpler fabrication process. The technological and the electrical simulations together with the fabrication steps of this new detector configuration are reported in this paper.