First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding

Abstract

In0.17Al0.83N/GaN high‐electron‐mobility transistor (HEMT) using GaN‐on‐Insulator (GaNOI) technology via 200 mm wafer bonding technique is developed with good DC and RF performance and high fT/fmax. Measurements obtained from X‐Ray diffraction and micro‐Raman spectroscopy have demonstrated a 5% reduction in “a lattice strain,” which results in the improvement of the sheet resistance (Rsh) from 301 to 284 Ω □−1. A 120 nm gate‐length device achieves a peak fT up to 96 GHz which yields a fT × Lg value of 11.5 GHz μm, which compares favorably with reported GaN‐based HEMTs on Si. These results demonstrate that GaNOI HEMT on Si is an attractive candidate for future mm‐wave applications. The implementation of GaNOI technology facilitates the integration of GaN devices into a chip alongside complementary metal–oxide–semiconductor technology that opens up the potential for integrated high‐power and RF applications, enabling more compact and efficient systems.