Abstract
Experimental results validate a continuous model describing the stress dependencies of CMOS FETs from weak through strong inversion. The model incorporates the significant impact of threshold voltage changes (through $\mathrm{n}_{\mathrm{i}}^{2}$ ) on the stress responses in all regions of operation and describes both first- and second-order longitudinal and traverse piezoresistive coefficients for PMOS and NMOS devices. Orthogonal differential pairs of MOSFETs can be utilized to directly measure the mobility component of the overall stress response.
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