Abstract
A rear side PECVD passivation stack and an aluminum firing-through paste for the rear side metallization of p-type bifacial multicrystalline solar cells were developed. Both passivation stack and Al paste were adapted to each other to reach best cell efficiencies. The refractive index of the rear side PECVD passivation stack is optimized to be etched effectively by the firing-through Al paste. Our experiments have shown that the boron doping underneath the passivation stack is helpful to reach a good passivation quality and contact formation. The paste was improved in the way to reach a low contact resistivity without impeding the VOC resulting in a compromise of these two parameters. We found out that the glass frit composition and mixture in the paste are the crucial factors for this kind of application. The so far highest cell efficiency of 17.8% with a VOC of 633 mV was reached with our Al firing-through paste on a PECVD SiNX layer.
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