Abstract

Silicon carbide, a high-strength material, has a ductile-brittle transition mechanism. In order to establish a reasonable silicon carbide abrasive belt grinding parameters to obtain high precision silicon carbide free-surface efficiently, a series of finite element simulations were conducted to comprehend the single point diamond grinding of silicon carbide using professional analysis software of nonlinear finite element in this paper. According to the differences of cutting parameter, such as cutting depth, cutting deformation of the chip and the maximum cutting force were studied. For the free-form surface with higher accuracy, the data showed that ductile machining of silicon carbide is more efficient along with the larger rake angle, the higher cutting speed and the smaller cutting depth.

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