Finite element analysis of polysilicon based MEMS temperature-pressure sensor

Abstract

Temperature and pressure sensor, both are in high demand for industrial application but to use pressure sensor in harsh environment is a challenging task. As many of the semiconductor devices have low tolerance to heat and device failed to work. To overcome the failure of the device, many attempts have been taken by researches. The one cost effective and efficient method is utilization of polysilicon material. In this paper, we investigate the opportunity of utilizing p-polysilicon for temperature-pressure sensor. To better understand the effect of pressure on resistors the device has been designed and modelled using finite element analysis and virtual fabrication process of proposed sensor has also been shown. The finite element analysis shows the cause of variation in sensitivity and temperature drift due to the influence of pressure. The sensors have been loaded under the pressure ranging from 10 to 100 psi within the temperature range from −40 °C to 60 °C. The sensitivity of proposed model was found to be ∼1.063 mv/psi. The change in resistance for lower pressure shows a drift in output curves while for higher pressure the output curves varies linearly with respect to temperature. The TCR value of designed pressure sensor was found to be ∼5.477 × 10−3(°C)−1.