Abstract
A scanning force microscope tester has shown its operational capability in device internal electrical potentials measurements with both submicron and gigahertz resolution [1]. In this paper we present a comparison of experimental results obtained by a scanning force microscope (SFM) test system and a numerical approach of the local electrical field distribution between a cone-shaped tip and sample based on the finite difference method. The tip-geometry is modelled taking the geometry obtained from a microimage into account. The simulation is carried out by sequentially moving the tip and calculating the reasonable field components. This model yields high accuracy in the prediction of voltage contrast measurements obtained with a SFM.
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