Abstract
The effects of an electric field on the fingerprint pattern of the relaxor Pb(Zn1/3Nb2/3)O3 (PZN) were investigated using atomic force microscopy (AFM). It was found that the pattern of the domain wall structure in the relaxor, called the fingerprint pattern, strongly depends on the dc field strength, and disappears for a weak field of 0.2 kV/cm, which is about 1/10 of the coercive field in the D–E hysteresis loop. The dc field dependence of the dielectric constant in PZN was also investigated. It was found that the dielectric constant under the dc field, being of the same order as the coercive field, gradually decreases to 84% with time, and the characteristic dispersion of the relaxor becomes remarkably small with the appearance of the piezoelectric response. We discussed the contribution from the small domain wall structure to the dielectric property of the relaxor.
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