Abstract
We have investigated fine structure of the 2P exciton in ZnSe films grown on GaAs substrates, using resonant hyper-Rayleigh and hyper-Raman scattering techniques. The 2P exciton line is found to show distinct fine structure caused by envelope-hole coupling, in addition to splitting of the exciton state due to strain effects. A spin Hamiltonian model reproduces well the observed energy splitting and the polarization dependence of the 2P exciton fine structure.
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