Abstract
The fine structure of Si LVV and N KLL Auger signals was determined at various depths in thermally nitrided SiO 2 films. The peak near 80 eV is shifted to a slightly higher energy at the surface and at the film-silicon interface, where the nitrogen concentration is greater. It is a little lower in the interior, where the nitrogen concentration is less. The N KLL peak was shifted to a slightly higher energy at the interface than at the surface and in the interior.
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