Abstract
High resolution Laplace defect spectroscopy was used to study the fine structure of the electron emission process of DX(Sn) centers in AlxGa1−xAs (x=0.26,0.53). Two groups of peaks in the spectra of electron emission rates were found to correspond to two DX-like centers observed by deep level transient spectroscopy. The line splitting in both groups derives from the alloy disorder effect attributed to the different local configurations of Al and Ga atoms around two DX-like centers. Experimental evidence for the microscopic nature of two DX-like centers in Sn-doped AlGaAs is provided.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
