Abstract
Al-related DX-like centers were observed in n-type Al-doped ZnS1−xTex epilayers grown by molecular-beam epitaxy on GaAs substrates. The capacitance–voltage measurement, deep-level transient spectroscopy, and photoconductivity spectroscopy revealed that the behaviors of Al donors in ZnS1−xTex were similar to the so-called DX centers in AlxGa1−xAs. The optical ionization energies (Ei) and emission barriers (Ee) for the observed two Al-related DX-like centers were determined as Ei∼1.0 and 2.0eV and Ee∼0.21 and 0.39eV, respectively. It was also shown that the formation of Al-related DX-like centers resulted in a significantly large lattice relaxation in ZnS1−xTex.
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