Abstract
We have developed and successfully obtained stable and reliable processes in our labs for metallization and pad definition of passivated Si substrates for microelectronic flip-chip assembly with solder bumps, applicable to high-density interconnection technology. Patterned samples were prepared with aluminum pads on Si/SiO2 over which the UBM multilayer metals were deposited. Pads are 90x90micron^2 with 185micron pitch. All metal layers show good stability and adherence, and the final processes have good reproducibility and stability. A flip-chip assembly using solder micro-bumps deposited over the pads was used to demonstrate stability and reliability of the process. This set of processes - metallization, pad definition and flip-chip assembly - will next be applied to functional devices.
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