Abstract
Fine dots fabrication using dimpled mold is demonstrated with narrow gaps between neighboring dots. An inverted pyramidal dimpled mold is fabricated by the novel method utilizing the peculiarity of an anisotropic wet chemical etching to form narrow gaps. By this method, the nano-imprinting mold for a quantum dot array with narrow gaps is fabricated beyond the resolution limit of conventional lithography. The optimum imprinting conditions such as imprinting pressure, temperature, sequence, cooling procedure and surface treatment for the mold and substrate are investigated by preliminary experiments using the test mold, which has 2 to 10μm square dot arrays. Based on the preliminary experiments, 250nm-pitched dot array is successfully fabricated by the fine mold with narrow gaps.
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