Novel Mold Fabrication for Nano-Imprint Lithography to Fabricate Single-Electron Tunneling Devices

Abstract

A novel method of fabricating a nano-imprinting mold for a single-electron device is newly proposed, which makes use of the peculiarity of anisotropic wet chemical etching. A row of resist patterns for quantum dots is placed to keep an offset angle θ against a <110> crystalline axis on a (100) Si surface. By an anisotropic wet chemical etching, the Si substrate is diagonally etched along the <110> and <110> directions, and an inverted pyramidal hole with a (111) plane surface is formed. The gap between them becomes narrower than that of the original pattern. Using this method, the nano-imprinting mold for a quantum dot array with narrow gaps beyond the resolution limit of conventional lithography is obtained.