Abstract
AbstractWe have regulated the number density and the size of the fine particles/clusters called nanoparticles into the a‐SiGe:H films deposited from silane and germane diluted in hydrogen by applying a square wave pulse modulations (SWPM) of the rf (13.56 MHz) amplitude in plasma enhanced chemical vapor deposition (PECVD). The plasma “on” time Ton and “off” time Toff were controlled over a wide range from 300 μsec to 30 msec. Growth rate (γr) of the number density (Nr) of the particles of size r shows a lognormal dependence on r. Tendency towards formation of nanocrystallites was observed on reducing the Ton. Ge content within nanocrystallites was found to increase with decrease in nanocrystallites size. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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