Fin shape dependent variability for strained SOI FinFETs

Abstract

In this paper, for the first time impact of fin shape variation on 22-nm technology node strained silicon-on-insulator (SSOI) n-FinFET has been examined. With 3D-TCAD simulator, the electrical characteristics are analyzed and compared for devices with fin shapes, rectangular and triangular. Here, strained technique improved the driving current and reduction in leakage current is done through use of triangular fin shape devices. For the same bottom width, triangular FinFETs improved OFF current ~ 2–2.5×. Moreover, the device characteristics variability has been considered through variations in fin width and work function (WF). It observed that triangular FinFETs with lightly doped fins are more susceptible for short channel effects. Due to low leakage current triangular FinFETs can maintain suitable ON to OFF ratio under the circumstance of work function and fin width variation.