Film Thickness-Dependent Microstructures and Dielectric Properties of Pb(Zr,Ti)O<sub>3</sub> Thick Films by Sol-Gel Processing

Abstract

Lead zirconate titanate thick films with thickness of 1-3μm have been prepared by a sol-gel process. Influence of film thickness on microstructures and dielectric properties of the films were investigated. The film thickness dependent of microstructures was studied by XRD and Raman spectrum. The PZT films were dense and possessed preferential crystal orientation. Ferroelectricity and dielectric properties were confirmed by P–E hysteresis loops and C-E measurements. The dielectric constant and dielectric loss of the film with thickness of 3.045μm were 2000 and 0.055, respectively. The decrease of the coercive field and the increase of the remanent polarization with the increase in thickness were observed. As film thickness was increasing, PZT thick films had higher (110)-preferred growth orientation and excellent dielectric and ferroelectric properties.