Abstract
Pr silicate films without interfacial layers were formed by pulsed laser deposition and high-temperature postdeposition annealing (PDA) and were evaluated in terms of structures and electrical properties. In the fabrication processes, film thickness and ambient gases during deposition were controlled. In some films, crystallization of Pr silicate was observed by transmission electron microscopy and it was found that tetragonal Pr2Si2O7 was epitaxially grown on Si(001) substrates. By deposition in Ar, Pr silicate with a small capacitance equivalent oxide thickness (CET) and a low leakage current density (J) was obtained (CET=1.1 nm and J=6 ×10-4 A/cm2 at a gate voltage of +1 V relative to the flat band voltage).
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