Abstract
Pr silicate and (La2O3)1-x(Al2O3)x composite silicate films have been synthesized. In the fabrication process developed in this study, metal oxide-based films deposited by molecular beam epitaxy or pulsed laser deposition are subjected to high temperature post-deposition annealing (PDA). The PDA effectively induces intermixing of a parasitic interfacial layer with the upper high dielectric constant film and forms a homogeneous film without the interfacial layer, realizing reduced capacitance equivalent oxide thickness as a gate dielectric. Physical and chemical structures of the synthesized films were systematically analyzed as well as their electrical properties.
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