Abstract
This paper reports investigation of stress in ScAlN thin films deposited on 4-in silicon wafers at various substrate temperature. ScAlN has a 5 times higher piezoelectric constant, but simultaneously ScAlN thin film has a large film stress. To relax the stress, the substrate temperature was changed between 170 and 250°C. Film stress, crystal quality, piezoelectric constant, and Sc concentration was investigated for the deposited ScAlN films. The film stress was relaxed as the substrate temperature increases.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
