Abstract
This paper reports investigation of stress in ScAlN thin films deposited on 4-in silicon wafers at various substrate temperature. ScAlN has a 5 times higher piezoelectric constant, but simultaneously ScAlN thin film has a large film stress. To relax the stress, the substrate temperature was changed between 170 and 250°C. Film stress, crystal quality, piezoelectric constant, and Sc concentration was investigated for the deposited ScAlN films. The film stress was relaxed as the substrate temperature increases.
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