Film deposition and UV curing process impact on ultralow-k dielectric for high performance Cu interconnects

Abstract

Ultralow-k (ULK) film deposition and UV curing process were studied to explore the effects on the mechanical, electrical and chemical properties of ULK dielectrics. UV curing process plays an important role to enhance the Young’s modulus (mechanical performance) by increasing the formation of –Si–O–Si– cross-linking, and ULK film deposition with low film shrinkage ratio can form a robust porous SiOCH to avoid following integration process-induced damage on ULK dielectrics and also improve the device reliability performance significantly.