Abstract
We experimentally demonstrate the field-free and ultra-low-power switching of perpendicular magnetization by combination of spin-orbit torque (SOT), exchange bias (EB) and voltage-controlled magnetic anisotropy (VCMA) effect. Field-free SOT switching is achieved with the aid of an inplane exchange bias generated in the perpendicularly magnetized IrMn/CoFeB/MgO structure. By applying a gate voltage of 0.6 V, the SOT switching current can be reduced by 49% (to 6.2 MA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ). Finally, we successfully demonstrate the prototype of a high-density and ultra-low-power voltagegated spintronic memory by both experiments and simulations.
Published Version
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