Abstract
AbstractIt is shown that the observed steep decrease of the electron density in photoconducting CdS(Al, Ag) with field in the range between 20 and 70 kV/cm is caused by a redistribution of holes from slow to fast recombination centres (field quenching). This redistribution is produced by field‐enhanced ionization of holes from Coulomb‐attractive slow recombination centers. The abrupt onset of the field quenching occurs because of the slow recombination traffic masking the fast center traffic until it becomes predominant. Competing infrared quenching reduces the masking effect and uncovers the earlier phases of field quenching already near 1 kV/cm (at 200 °K). Impact ionization and Zener extraction of holes from slow centers cannot explain the observed behavior. However, quantitative agreement between experiment and field quenching via field‐enhanced ionization can be reached.
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