Abstract
In this work, vertical NiO/Ga2O3 heterojunction diodes (HJDs) integrated with SiNx/Al2O3 double-layered insulating field plate (FP) structures have been demonstrated. With the additional post-annealing, the resultant diode exhibits a decreased differential specific on-resistance (Ron,sp) of 5.4 mωcm2 and an enhanced breakdown voltage (BV) of 1036 V. The improved performance is attributed by the combination of the FP-suppressed crowding electric field at the device edge and the reduced trap density at the NiO/Ga2O3 interface. In particular, the near-unity ideality factor has been achieved for this p-n HJD at an elevated temperature of 275∘C, indicating that the diffusion current is dominated. The high-temperature operation capability is owing to the quality improvement of NiO/Ga2O3 interface, where the Shockley-Read-Hall (SRH) recombination mediated by deep-level defects within the depletion region is thus suppressed.
Highlights
I n recent years, tremendous efforts have been devoted in developing Ga2O3 based power electronic devices
We developed the vertical NiO/Ga2O3 heterojunction diodes (HJDs) with SiNx/Al2O3 double-layered insulating field plate (FP) structures and the post-thermal treatment [9]
Upon annealing, the deep level transient spectroscopy (DLTS) peak decreases in intensity and move to high temperature region, which indicates the slight change in trap density and energy level
Summary
I n recent years, tremendous efforts have been devoted in developing Ga2O3 based power electronic devices. We developed the vertical NiO/Ga2O3 HJDs with SiNx/Al2O3 double-layered insulating field plate (FP) structures and the post-thermal treatment [9].
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