Abstract
Source-gated transistors (SGTs) have potentially very high output impedance and low saturation voltages, which make them ideal as building blocks for high-performance analog circuits fabricated in thin-hlm technologies. The quality of saturation is greatly influenced by the design of the held-relief structure incorporated into the source electrode. Starting from measurements on self-aligned polysilicon structures, we show through numerical simulations how the held plate (FP) design can be improved. A simple source FP around 1 μm long situated several tens of nanometers above the semiconductor can increase the low-voltage intrinsic gain by more than two orders of magnitude and offers adequate tolerance to process variations in a moderately scaled thin-hlm SGT.
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