Abstract
A new form of thin film transistor, named the source-gated transistor (SGT), is described. The current is determined by a source barrier, located opposite a gate that controls the effective source barrier height. The SGT has several advantages compared with a standard FET. These include a much lower saturation voltage, higher output impedance, and in the case of amorphous silicon, a much better stability.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
