Abstract
It is necessary to understand the distribution of the electrostatic potentials and strain fields in semiconductor devices in order to improve their performance. In this paper we will present results showing active dopant mapping that have been obtained on state-of-the-art devices obtained by off-axis electron holography. We will also present a range of different techniques that can be used to map the strain in these devices with nm-scale resolution.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.