Abstract
AbstractField‐free switching is a critical issue for spin‐orbit torque‐induced magnetic random‐access memory (SOT‐MRAM) with perpendicular magnetic anisotropic (PMA) towards application. If only the spin‐polarized electrons along the y‐direction (σy) are used, deterministic switching cannot be achieved, as the electron polarization direction and easy magnetization direction are orthogonal. In this work, z‐direction polarized electrons (σz) produced by the spin Hall effect are utilized to provide the switching direction and σy provides the propulsion of magnetic reorientation. With the cooperation of σy and σz by the spin Hall effect, field‐free switching is achieved. To combine with magnetic tunnel junction (MTJ), a model is proposed, in which heavy metals providing σz are deposited on MTJ with asymmetric writing line widths. This model retains the characteristics of read‐write separation and realizes deterministic switching based on SOT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
