Field evaporation of silicon surfaces

Abstract

Quantitative measurements on field evaporation of Si(111) surfaces in hydrogen imaging gas have been carried out by field ion microscopy. The field evaporation rate is found to increase exponentially with increase of the reciprocal of tip temperature in the range 80–103 K. The evaporation field strength increases with increase of tip temperature in the investigated range, 80–300 K. Within the applied pressure range, 5× 10 −6 to 2 × 10 −4 Torr of hydrogen gas, the evaporation rate linearly increases with the gas pressure. Similar effects of temperature and gas pressure on field evaporation of Si(111) surfaces have been observed also in silane imaging gas. A model, based on a field-induced formation of surface hydrides as a rate-determining step, is proposed, which accounts for all the experimental results of the field evaporation process.