Abstract
The field evaporation rate of Si(111) face in H 2 imaging gas is measured by counting the removal rates on individual net planes in a field ion microscope. The rate is found to decrease with increasing temperature and to be proportional to H 2 gas pressure. The evaporation voltage increases with temperature ( T<300). A model explaining this temperature dependence is based on the rate-determining formation of surface hydrides due to field-induced chemisorption of hydrogen.
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