Abstract
Electronic transport in the presence of trapping centers is considered by taking into account the local electric field contribution. A generalization of the previous models of field-assisted thermal ionization is proposed. The origin of the local electric field is discussed and a theoretical evaluation based on the electron-phonon interaction is given in agreement with the experimental results obtained in some differently doped ${\mathrm{CdF}}_{2}$ crystals and in SiO films.
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