Abstract
By adding a memory function to each pixel of a field emission display (FED), an ultrahigh luminance FED with a luminance of more than 10000cd∕m2 can be realized. For this purpose, the authors fabricated a field emitter array (FEA) with a memory function, in which a FEA, emission-control thin-film transistor (TFT), memory capacitor, and write-control TFT are monolithically integrated. They used an HfC-coated Si tip for the FEA because it enables a long emission lifetime. The TFT structure was optimized to control the emission current. The memory-function FEA was demonstrated in a vacuum chamber. The data holding time of the memory function was also measured. It was sufficiently long for display applications.
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More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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