Abstract
AbstractA silicon field emitter array (FEA) was fabricated on n‐type, low‐resistance (5Ω·cm) Si(100) wafer by anisotropic etching (dipping in 40 wt.% KOH solutions). To increase the thermochemical durability of the tip, the long‐term stability and the current density, Ti (30 nm) film was deposited with evaporation and the silicide was formed by annealing at 650°C. The C54–TiSi2 phase of the sample was observed by x‐ray diffraction analysis. The emission characteristics of the titanium silicide FEA were compared with those of an Si FEA under high vacuum conditions of ∼10−7 Torr. The turn‐on voltage of the titanium silicide FEA is ∼1500 V whereas that of the Si FEA is found to be 1950 V. In addition, the emission stability of the titanium silicide FEA proved to be much better than that of the Si FEA. Copyright © 2004 John Wiley & Sons, Ltd.
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