Abstract
We have used scanning tunneling microscopy to study field emission resonances (FER) and unoccupied states on glassy Nb 40 Ni 60 in ultra-high vacuum. Conductivity versus bias voltage (d I/d V( V)) and d I/d s( V) curves were measured in the constant-current mode as a function of tunneling current and lateral tip position. For d I/d s( V) curves the number of FER is found to be a weak function of lateral tip position. The influence of the density of states is best seen in the tunneling regime. A dependence on lateral tip position has been observed in the d I/d V curves for both the tunneling and the field emission (Fowler-Nordheim) regimes.
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