Abstract
A simple technique is explored to determine the temporal photo-response, τ, of individual semiconducting SiC and Si nanowires (NWs), with a high time resolution. Laser-assisted field emission (LAFE) from the NWs is first shown to be highly sensitive to continuous laser illumination. Pulsed illumination is then combined with measurements of the total energy distributions to determine τ which were rather large, 4–200 μs. The time response scaled roughly with the square of the NWs length and could be attributed to laser-induced heating. LAFE is thus a new tool for quantifying rapid thermo-optical effects in such nano-objects.
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