Abstract
Patterned silicon nanocrystallite (SiNC) films were fabricated on (100) orientation p-type boron-doped silicon wafer by the hydrogen ionimplantation technique and the anodic etching method. The efficientfield emission with low turn-on field of about 3.5 V/μm at currentdensity of 0.1 μA/cm2 was obtained. The emission current densityfrom the SiNC films reached 1 mA/cm2 under a bias field of about9.1 V/μm. The experimental results demonstrate that there are greatpotential applications of the SiNC films for flat panel displays. Asurface treatment with hydrogen plasma was performed on the SiNC filmsand a significant improvement of emission properties was achieved.
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