Abstract
Patterned silicon nanocrystallite (Si-nC) films were fabricated on (1 0 0) orientation, p-type boron doped silicon wafer by the hydrogen ion implantation technique and the anodic etching method. Efficient field emission with low turn-on field of about 3.2 V/μm at current density of 0.1 μA/cm 2 was obtained. The emission current density from the Si-nC films reached 1 mA/cm 2 under a bias field of about 10 V/μm. The experimental results demonstrated that there were great potential applications of the Si-nC films for flat panel displays. A surface treatment with hydrogen plasma was performed on the Si-nC films and a significant improvement of emission properties was achieved.
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