Abstract
Field emission from diamond-like-carbon (DLC) films grown on a silicon substrate has been investigated. The films were prepared using radio-frequency plasma-assisted chemical vapor deposition. A DLC film incorporated with nitrogen exhibited better emission characteristics. For both nitrogen-incorporated and pure DLC, electric arc between the film and anode drastically enhanced the emission current. Analysis showed that the arc induced the formation of silicon carbide and the change in the surface morphology. The possible mechanism of the enhanced emission is discussed.
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