Abstract
The authors report field emission from nanometer-sharp tips of polarized PbZrxTi1−xO3 (PZT), silicon, and platinum. The PZT nanoemitters are fabricated in a batch fabrication process from single-crystal silicon tips that are coated with a 30 nm thick film of crystalline PZT. The nanoemitters start to emit electrons at fields as low as 2 V/μm and reach threshold emission, or turn-on, at fields as low as 3.9 V/μm. The turn-on field is 3.9 V/μm for PbZr0.2Ti0.8O3, 6.8 V/μm for PbZr0.52Ti0.48O3, and 10.75 V/μm for PbZr0.8Ti0.2O3. The silicon nanoemitters have an electron emission turn-on field of 7.2 V/μm, and the platinum nanoemitters have an electron emission turn-on field of 5.75 V/μm. Using a Fowler-Nordheim analysis, the calculated effective work function of the PbZr0.2Ti0.8O3 film is 1.00 eV, and the field amplification factor is ∼1526.
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